Isaac Christensen (isaac.christensen@se-eng.com) just uploaded a new patch set to gerrit, which you can find at http://review.coreboot.org/6613
-gerrit
commit 9cb9c47b271e6833ff548c9729f39367c8bad7c7 Author: David Hendricks dhendrix@chromium.org Date: Thu Aug 29 14:05:21 2013 -0700
exynos5420/pit/kirby: re-factor membaseconfig0/1 usage
membaseconfig0/1 are utterly dependent on the mainboard's particular DRAM setup. This defines their values in the mem_timings struct for pit and kirby.
Signed-off-by: David Hendricks dhendrix@chromium.org
Old-Change-Id: Ifd782d1229b2418f8ddbf0bcb3f45cc828ac34b0 Reviewed-on: https://chromium-review.googlesource.com/167488 Commit-Queue: David Hendricks dhendrix@chromium.org Tested-by: David Hendricks dhendrix@chromium.org Reviewed-by: ron minnich rminnich@chromium.org (cherry picked from commit 80eebd5bc0dbb9fabf81f46c25dcd5c5d5747579)
exynos5420: necessary updates for DRAM
This updates DRAM usage for Exynos5420 so that we can actually use 3.5GB:
- Memory chips used with Exynos5420 may have 16 row address lines.
Signed-off-by: David Hendricks dhendrix@chromium.org
Old-Change-Id: I86d1a96d0d1a028587f7655f8de5a2e52165e9d2 Reviewed-on: https://chromium-review.googlesource.com/167489 Commit-Queue: David Hendricks dhendrix@chromium.org Tested-by: David Hendricks dhendrix@chromium.org Reviewed-by: ron minnich rminnich@chromium.org (cherry picked from commit 04bbaf5d8e125166dd689f656d5b37776be01fb1)
Squashed two related commits.
Change-Id: I4e45bc8a446715897ec21b0160701152fa6b226b Signed-off-by: Isaac Christensen isaac.christensen@se-eng.com --- src/cpu/samsung/exynos5420/dmc_init_ddr3.c | 24 +++++++++--------------- src/cpu/samsung/exynos5420/setup.h | 16 +++++++--------- src/mainboard/google/pit/memory.c | 7 +++++++ 3 files changed, 23 insertions(+), 24 deletions(-)
diff --git a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c index 1126dca..1d7b8a8 100644 --- a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c +++ b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c @@ -145,21 +145,15 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) update_reset_dll(drex0, DDR_MODE_DDR3); update_reset_dll(drex1, DDR_MODE_DDR3);
- /* Set Base Address: - * 0x2000_0000 ~ 0x5FFF_FFFF - * 0x6000_0000 ~ 0x9FFF_FFFF - */ - /* MEMBASECONFIG0 */ - val = DMC_MEMBASECONFIGx_CHIP_BASE(DMC_CHIP_BASE_0) | - DMC_MEMBASECONFIGx_CHIP_MASK(DMC_CHIP_MASK); - writel(val, &tzasc0->membaseconfig0); - writel(val, &tzasc1->membaseconfig0); - - /* MEMBASECONFIG1 */ - val = DMC_MEMBASECONFIGx_CHIP_BASE(DMC_CHIP_BASE_1) | - DMC_MEMBASECONFIGx_CHIP_MASK(DMC_CHIP_MASK); - writel(val, &tzasc0->membaseconfig1); - writel(val, &tzasc1->membaseconfig1); + /* MEMBASECONFIG0 (CS0) */ + writel(mem->membaseconfig0, &tzasc0->membaseconfig0); + writel(mem->membaseconfig0, &tzasc1->membaseconfig0); + + /* MEMBASECONFIG1 (CS1) */ + if (mem->chips_per_channel == 2) { + writel(mem->membaseconfig1, &tzasc0->membaseconfig1); + writel(mem->membaseconfig1, &tzasc1->membaseconfig1); + }
/* Memory Channel Inteleaving Size * Exynos5420 Channel interleaving = 128 bytes diff --git a/src/cpu/samsung/exynos5420/setup.h b/src/cpu/samsung/exynos5420/setup.h index 3bd36b2..950c2c6 100644 --- a/src/cpu/samsung/exynos5420/setup.h +++ b/src/cpu/samsung/exynos5420/setup.h @@ -136,6 +136,7 @@ struct exynos5_phy_control; #define DMC_MEMCONFIGx_CHIP_COL_10 (3 << 8) #define DMC_MEMCONFIGx_CHIP_ROW_14 (2 << 4) #define DMC_MEMCONFIGx_CHIP_ROW_15 (3 << 4) +#define DMC_MEMCONFIGx_CHIP_ROW_16 (4 << 4) #define DMC_MEMCONFIGx_CHIP_BANK_8 (3 << 0)
#define DMC_MEMBASECONFIGx_CHIP_BASE(x) (x << 16) @@ -767,15 +768,12 @@ struct exynos5_phy_control; #define DPWRDN_EN (1 << 1) #define DSREF_EN (1 << 5)
-/* As we use channel interleaving, therefore value of the base address - * register must be set as half of the bus base address - * RAM start addess is 0x2000_0000 which means chip_base is 0x20, so - * we need to set half 0x10 to the membaseconfigx registers - * see exynos5420 UM section 17.17.3.21 for more - */ -#define DMC_CHIP_BASE_0 0x10 -#define DMC_CHIP_BASE_1 0x50 -#define DMC_CHIP_MASK 0x7C0 +/* AXI base address mask */ +#define DMC_CHIP_MASK_256MB 0x7f0 +#define DMC_CHIP_MASK_512MB 0x7e0 +#define DMC_CHIP_MASK_1GB 0x7c0 +#define DMC_CHIP_MASK_2GB 0x780 +#define DMC_CHIP_MASK_4GB 0x700
#define MEMBASECONFIG_CHIP_MASK_VAL 0x7E0 #define MEMBASECONFIG_CHIP_MASK_OFFSET 0 diff --git a/src/mainboard/google/pit/memory.c b/src/mainboard/google/pit/memory.c index 4ac3d0c..0c30773 100644 --- a/src/mainboard/google/pit/memory.c +++ b/src/mainboard/google/pit/memory.c @@ -90,6 +90,13 @@ const struct mem_timings mem_timings = { DMC_MEMCONTROL_BL_8 | DMC_MEMCONTROL_PZQ_DISABLE | DMC_MEMCONTROL_MRR_BYTE_7_0, + /* + * For channel interleaving, the chip_base needs to be set to + * half the bus address. So for a base address of 0x2000_0000, + * the chip_base value is 0x20 without interleaving and 0x10 + * with channel interleaving. See note in section 17.14. + */ + .membaseconfig0 = (0x10 << 16) | DMC_CHIP_MASK_1GB, .memconfig = DMC_MEMCONFIG_CHIP_MAP_SPLIT | DMC_MEMCONFIGx_CHIP_COL_10 | DMC_MEMCONFIGx_CHIP_ROW_15 |