Isaac Christensen (isaac.christensen@se-eng.com) just uploaded a new patch set to gerrit, which you can find at http://review.coreboot.org/6604
-gerrit
commit c0836535a18b70c4d106738f283bc8637c2397ea Author: David Hendricks dhendrix@chromium.org Date: Tue Aug 20 17:13:01 2013 -0700
exynos5420: Alter init sequence as per recommendation
As per hardware recommendation, CKE PAD retention release must happen just before gate leveling enable and only in case of resume. Hence, this patch moves pad retention release from dmc_common.c to dmc_init_ddr3_exynos5420.c. In addition to this we are providing 125 (+3 extra being safe) times auto refresh to DRAM by sending REFA direct command. This is required because when CKE PAD retention release happens, self refresh mode of DDR3 is disabled. Hence, auto refresh 125 times.
This is ported from https://gerrit.chromium.org/gerrit/#/c/65573
Note: Since WAKEUP_DIRECT does not go thru memory init, it should be safe to move CKE PAD retention out of bootblock.c.
Signed-off-by: David Hendricks dhendrix@chromium.org
Change-Id: Idec5d6fbbe3c6344d47401ba7203079c52a9b866 Reviewed-on: https://gerrit.chromium.org/gerrit/66788 Commit-Queue: David Hendricks dhendrix@chromium.org Tested-by: David Hendricks dhendrix@chromium.org Reviewed-by: Ronald G. Minnich rminnich@chromium.org (cherry picked from commit 96cbcb09245d4df92d3e1998704ab440be42df25) Signed-off-by: Isaac Christensen isaac.christensen@se-eng.com --- src/cpu/samsung/exynos5420/bootblock.c | 17 ------------- src/cpu/samsung/exynos5420/dmc_init_ddr3.c | 39 ++++++++++++++++++++++++++---- src/cpu/samsung/exynos5420/setup.h | 1 + 3 files changed, 35 insertions(+), 22 deletions(-)
diff --git a/src/cpu/samsung/exynos5420/bootblock.c b/src/cpu/samsung/exynos5420/bootblock.c index 1ad75ef..2c42b03 100644 --- a/src/cpu/samsung/exynos5420/bootblock.c +++ b/src/cpu/samsung/exynos5420/bootblock.c @@ -31,23 +31,6 @@ void bootblock_cpu_init(void); void bootblock_cpu_init(void) { - u32 ret; - /* - * During Suspend-Resume & S/W-Reset, as soon as PMU releases - * pad retention, CKE goes high. This causes memory contents - * not to be retained during DRAM initialization. Therfore, - * there is a new control register(0x100431e8[28]) which lets us - * release pad retention and retain the memory content until the - * initialization is complete. - */ - if (read32(((void *)INF_REG_BASE + INF_REG1_OFFSET)) == S5P_CHECK_SLEEP) { - write32(PAD_RETENTION_DRAM_COREBLK_VAL, - (void *)PAD_RETENTION_DRAM_COREBLK_OPTION); - do { - ret = read32((void *)PAD_RETENTION_DRAM_STATUS); - } while (ret != 0x1); - } - /* kick off the multi-core timer. * We want to do this as early as we can. */ diff --git a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c index 6c431f3..0a4edc8 100644 --- a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c +++ b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c @@ -184,14 +184,43 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) writel(mem->timing_power, &drex0->timingpower); writel(mem->timing_power, &drex1->timingpower);
- /* Send NOP, MRS and ZQINIT commands. - * Sending MRS command will reset the DRAM. We should not be - * reseting the DRAM after resume, this will lead to memory - * corruption as DRAM content is lost after DRAM reset. - */ if (reset) { + /* Send NOP, MRS and ZQINIT commands. + * Sending MRS command will reset the DRAM. We should not be + * reseting the DRAM after resume, this will lead to memory + * corruption as DRAM content is lost after DRAM reset. + */ dmc_config_mrs(mem, drex0); dmc_config_mrs(mem, drex1); + } else { + u32 ret; + + /* + * During Suspend-Resume & S/W-Reset, as soon as PMU releases + * pad retention, CKE goes high. This causes memory contents + * not to be retained during DRAM initialization. Therfore, + * there is a new control register(0x100431e8[28]) which lets us + * release pad retention and retain the memory content until the + * initialization is complete. + */ + write32(PAD_RETENTION_DRAM_COREBLK_VAL, + (void *)PAD_RETENTION_DRAM_COREBLK_OPTION); + do { + ret = read32((void *)PAD_RETENTION_DRAM_STATUS); + } while (ret != 0x1); + + /* + * CKE PAD retention disables DRAM self-refresh mode. + * Send auto refresh command for DRAM refresh. + */ + for (i = 0; i < 128; i++) { + writel(DIRECT_CMD_REFA, &drex0->directcmd); + writel(DIRECT_CMD_REFA | (0x1 << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(DIRECT_CMD_REFA, &drex1->directcmd); + writel(DIRECT_CMD_REFA | (0x1 << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } }
if (mem->gate_leveling_enable) { diff --git a/src/cpu/samsung/exynos5420/setup.h b/src/cpu/samsung/exynos5420/setup.h index ca7281d..9dc49d8 100644 --- a/src/cpu/samsung/exynos5420/setup.h +++ b/src/cpu/samsung/exynos5420/setup.h @@ -715,6 +715,7 @@ struct exynos5_phy_control; #define DIRECT_CMD_ZQINIT 0x0a000000 #define DIRECT_CMD_CHANNEL_SHIFT 28 #define DIRECT_CMD_CHIP_SHIFT 20 +#define DIRECT_CMD_BANK_SHIFT 16 #define DIRECT_CMD_REFA (5 << 24) #define DIRECT_CMD_MRS1 0x71C00 #define DIRECT_CMD_MRS2 0x10BFC