Add support for EEPROMs with 1 byte granularity and implicit erase on write. flashrom will not try to erase before write on these chips. Explicitly requested erase is done by writing 0xff.
Signed-off-by: Carl-Daniel Hailfinger c-d.hailfinger.devel.2006@gmx.net
Index: flashrom-no_implicit_erase/flash.h =================================================================== --- flashrom-no_implicit_erase/flash.h (Revision 1821) +++ flashrom-no_implicit_erase/flash.h (Arbeitskopie) @@ -87,6 +87,7 @@ write_gran_528bytes, /* If less than 528 bytes are written, the unwritten bytes are undefined. */ write_gran_1024bytes, /* If less than 1024 bytes are written, the unwritten bytes are undefined. */ write_gran_1056bytes, /* If less than 1056 bytes are written, the unwritten bytes are undefined. */ + write_gran_1byte_implicit_erase, /* EEPROMs and other chips with implicit erase and 1-byte writes. */ };
/* Index: flashrom-no_implicit_erase/flashrom.c =================================================================== --- flashrom-no_implicit_erase/flashrom.c (Revision 1821) +++ flashrom-no_implicit_erase/flashrom.c (Arbeitskopie) @@ -766,6 +766,10 @@ case write_gran_1056bytes: result = need_erase_gran_bytes(have, want, len, 1056); break; + case write_gran_1byte_implicit_erase: + /* Do not erase, handle content changes from anything->0xff by writing 0xff. */ + result = 0; + break; default: msg_cerr("%s: Unsupported granularity! Please report a bug at " "flashrom@flashrom.org\n", __func__); @@ -807,6 +811,7 @@ switch (gran) { case write_gran_1bit: case write_gran_1byte: + case write_gran_1byte_implicit_erase: stride = 1; break; case write_gran_256bytes: