Before I get started on the review, just a general comment or two.
If you plan to contribute in the future (which I certainly hope you will), please break submissions down into blocks of 5-10 chips. This makes it so much easier for me, and any other reviewers, to quickly check the patch and provide feedback in a timely manner.
In the last review, I mentioned the Numonyx M45PE series (10, 20, 40, 80, 16), should only have
+ .feature_bits = FEATURE_WRSR_WREN,
set when the command is there. It appears I may have been unclear there, because instead of removing just the WREN flag, you removed the whole line (the chips do have a Write Status Register- WRSR).
Continuing the review from Numonyx M45PE16.
Numonyx M25PX80-
+ .voltage = {2700, 3600},
The datasheets I've seen have it as 2.3-3.6V (rev 4 Dec 2008 and Rev B 3/2013)
+ .tested = TEST_OK_PREW,
Unless
I'm reading it wrong, it looks like you're adding this chip as a fully
tested one- would you mind supplying some logs showing that it
successfully does these operations? (write logs shouldn't contain all :S
(for skipped blocks) next to the addresses).
Numonyx N25Q00AA13-
I'll admit I don't really know how this chip works, but it seems there should be a 3rd eraseblock from the description of the memory organization (datasheet is Rev E, 2/12):
Memory Configuration and Block Diagram
The memory is a stacked device comprised of four 256Mb chips. Each chip is internally
partitioned into two 128Mb segments. Each page of memory can be individually pro-
grammed. Bits are programmed from one through zero. The device is subsector, sector,
or single 256Mb chip erasable, but not page-erasable. Bits are erased from zero through
one. The memory is configured as 134,217,728 bytes (8 bits each); 2048 sectors (64KB
each); 32,768 subsectors (4KB each); and 524,288 pages (256 bytes each); and 64 OTP
bytes are located outside the main memory array.